EDUCATION
2023 August(expected)
Doctor of Philosophy
University at Buffalo, New York
Electrical Engineering
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Dissertation: Fabrication and characterization of high scaled Beta Ga2O3 FET for RF applications
2020 June
University at Buffalo, New York
Master's of Science
Electrical Engineering
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Thesis: Fabrication of Micron Scale Test Structures for Magneto-Electric Cr2O3 Thin Films
2016
Bangladesh University of Engineering and Technology (BUET)
Bachelor of Science
Electrical and Electronic Engineering
EXPERIENCE
2018-2021
Prof Singisetti Group,University at Buffalo
Research Assistant
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-5 years of working experience in cleanroom dealing with various nanofabrication tools and semiconductor characterization techniques.
-Fabricated 175 nm T gate Ga2O3 MOSFETs which showed record 5.4 MV/cm Average Breakdown field, highest reported for sub-micron devices and highest overall without using field plate technique\\ -
Successfully fabricated AlGaO/GaO HFET with 160 nm Gate length which demonstrated record ft/fmax of 30/37 GHz among Gallium Oxide devices
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First Successful Siilicon Nitride passivation of AlGaO/GaO heterostructure FET, which shows no DC-RF dispersion
2018-2021
Electrical Engineering, University at Buffalo
Teaching Assistant
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Microwave Engineering I (EE 569)- Fall 2019, Fall 2020
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Microwave Engineering II (EE 574)- Spring 2020, Spring 2021.
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Antennas and Propagation (EE 536)- Spring 2020.
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Electronic device and Circuits II (EE 311)- Spring 2019.
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Electronic circuits sessional (EE 353) - Spring 2018.
2018-2023
Semiconductor Research Corporation (SRC)
Student Participant
Project: Antiferromagnetic Magneto-electric Memory and Logic, ID: 2760
Project: High Speed Ultrawidebandgap Gallium Oxide Transistors, ID: 3007.
SKILLS
Electron Beam Lithography(EBL)
Scanning Electron Microscopy (SEM)
Photolithography
Reactive Ion Etching (RIE)
Plasma Enhanced Chemical Vapour Deposition (PECVD)
Atomic Layer deposition
E- Beam Evaporation
Pulsed and RF characterization
Atomic Force Microscopy (AFM)
Energy Dispersive Xray Detection System
Device Simulation software:
Silvaco TCAD
Data analysis Software: Python, Origin, Matlab
PUBLICATIONS
Journal:
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1. Chinmoy Nath Saha, Abhishek Vaidya and U. Sinsigisetti, ”Temperature dependent pulsed IV and RFcharacterization of β-(AlxGa1-x)2O3/Ga2O3 Heterostrcuture FET (HFET) with ex-situ passivation,” Applied Physics Letter , Vol 120, Issue 17, p. 172102, April 2022. https://doi.org/10.1063/5.0083657
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2. Chinmoy Nath Saha, A. Vaidya, AFM Bhuiyan, L. Meng, Shivam Sharma, H. Zhao and U. Singisetti, "Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz" Applied Physics Letter, Vol. 122, Issue 18, May 2023, https://doi.org/10.1063/5.0149062.
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3. Abhishek Vaidya*, Chinmoy Nath Saha* and U. Singisetti, "Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency," in IEEE Electron Device Letters, vol. 42, no. 10, pp. 1444-1447, Oct. 2021, doi: 10.1109/LED.2021.3104256. (*= equal contribution)
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4. Prafful Golani, Chinmoy Nath Saha, Prakash Palamedu Sundaram, Fengdeng Liu, Tristan K. Truttmann, V. R. Saran Kumar Chaganti, Bharat Jalan, Uttam Singisetti, and Steven J. Koester, "Self-Heating in Ultra-Wide Bandgap n-Type SrSnO3 Thin Films", Applied Physics Letter, Vol. 121, Issue 16, Oct. 2022. https://doi.org/10.1063/5.0105962
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Conference:
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1. Chinmoy Nath Saha, Abhishek Vaidya and U. Singisetti, "β-(Al0.19Ga0.81)2O3/Ga2O3 enhancement mode HFETs with high ft-Lg product", 26th Easter Eastman Conference on High Performance Device, University Of Notre Dame Indiana, USA, August 2021.
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2. Chinmoy Nath Saha, Abhishek Vaidya and U. Sinsigisetti ,"Si3N4 Ex-situ Passivation Study and Temperature-Dependent RF Performance Analysis of β-(Al0.19Ga0.81)2O3/Ga2O3 HFET" Compound Semiconductor Week(48th ISCS and 33rd IPRM), University of Michigan, Ann arbor, June 2022.
3. Chinmoy Nath Saha, R. Fabiha and M. S. Islam, "Effect of dielectric constant and oxide thickness on the performance analysis of symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region," 2017 International Conference on Electrical, Computer and Communication Engineering (ECCE), 2017, pp. 140-144, doi: 10.1109/ECACE.2017.7912895.
4. R. Fabiha, Chinmoy Nath Saha and M. S. Islam, "Analytical modeling and performance analysis for symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region," 2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC), 2017, pp. 310-313, doi: 10.1109/R10-HTC.2017.8288963.