Chinmoy Nath Saha

Chinmoy Nath Saha, Ph.D

Hello! I'm Chinmoy

I am an alumni of at the Department of Electrical Engineering, University at Buffalo, NY. I received my PhD degree in September, 2023. During my PhD, I have worked on high freq Gallium oxide FET fabrication and characterization.

I worked as a process development engineer

at Texas instruments from Oct 2023- August 2024. Currently I am working as a postdoctoral fellow at University of California Santa Barbara

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EDUCATION

2023 September

Doctor of Philosophy

University at Buffalo, New York

Electrical Engineering

Dissertation: Fabrication and characterization of high scaled Beta Ga2O3 FET for RF applications

2020 June

University at Buffalo, New York

Master's of Science

Electrical Engineering

Thesis: Fabrication of Micron Scale Test Structures for Magneto-Electric Cr2O3 Thin Films

2016

Bangladesh University of Engineering and Technology (BUET)

Bachelor of Science

Electrical and Electronic Engineering

EXPERIENCE

2018-2023

Prof Singisetti Group,University at Buffalo

Research Assistant

-5 years of working experience in cleanroom dealing with various nanofabrication tools and semiconductor characterization techniques.
-Fabricated 175 nm T gate Ga2O3 MOSFETs which showed record 5.4 MV/cm Average Breakdown field, highest reported for sub-micron devices and highest overall without using field plate technique\\
Successfully fabricated AlGaO/GaO HFET with 160 nm Gate length which demonstrated record ft/fmax of 30/37 GHz among Gallium Oxide devices
First Successful Siilicon Nitride passivation of AlGaO/GaO heterostructure FET, which shows no DC-RF dispersion
Successful demonstration of 55 GHz fmax for Ga2O3 MOSFET using sub-100 nm gate length

2018-2021

Electrical Engineering, University at Buffalo

Teaching Assistant

Microwave Engineering I (EE 569)- Fall 2019, Fall 2020
Microwave Engineering II (EE 574)- Spring 2020, Spring 2021.
Antennas and Propagation (EE 536)- Spring 2020.
Electronic device and Circuits II (EE 311)- Spring 2019.
Electronic circuits sessional (EE 353) - Spring 2018.

2023-2024

Process Development Engineer, Texas Instrument

Principal investigator of Tech transfer project, debugging issues related to device yield and performance improvement of NEXFET 3.2 and 3.05

2024-Current

Postdoctoral Fellow, University of California, Santa Barbara

SKILLS

Electron Beam Lithography(EBL)

Scanning Electron Microscopy (SEM)

Photolithography

Reactive Ion Etching (RIE)

Plasma Enhanced Chemical Vapour Deposition (PECVD)

Atomic Layer deposition

E- Beam Evaporation

Pulsed and RF characterization

Atomic Force Microscopy (AFM)

Energy Dispersive Xray Detection System

Device Simulation software:

Silvaco TCAD

Data analysis Software: Python, Origin, Matlab

EXPERTISE

CLIENTS

PUBLICATIONS

Journal:

1. CN Saha,, NJ Nipu, and U. Singisetti, " High performance vacuum- annealed β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) with ft/fmax of 32/65 GHz. ” Applied Physics Express, July, 2025. DOI 10.35848/1882-0786/adeb43..

2. CN Saha, A. Vaidya, NJ Nipu, L. Meng, DS Yu, H. Zhao and U. Singisetti, "Thin Channel Ga2O3 MOSFET with 55 GHz fmax and near > 100V breakdown" Applied Physics Letter, Vol. 125, Issue 18, Aug 2024, https://doi.org/10.1063/5.0208580.

2. CN Saha, A. Vaidya, AFM Bhuiyan, L. Meng, Shivam Sharma, H. Zhao and U. Singisetti, "Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz" Applied Physics Letter, Vol. 122, Issue 18, May 2023, https://doi.org/10.1063/5.0149062.

4. CN Saha, A. Vaidya and U. Singisetti, ”Temperature dependent pulsed IV and RFcharacterization of β-(AlxGa1-x)2O3/Ga2O3 Heterostrcuture FET (HFET) with ex-situ passivation,” Applied Physics Letter , Vol 120, Issue 17, p. 172102, April 2022. https://doi.org/10.1063/5.0083657

5. A. Vaidya*, CN Saha* and U. Singisetti, "Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency," in IEEE Electron Device Letters, vol. 42, no. 10, pp. 1444-1447, Oct. 2021, doi: 10.1109/LED.2021.3104256. (*= equal contribution)

6. P. Golani, CN Saha, P. Sundaram, F. Liu, Tristan K. Truttmann, V. R. Saran Kumar Chaganti, B. Jalan, U. Singisetti, and Steven J. Koester, "Self-Heating in Ultra-Wide Bandgap n-Type SrSnO3 Thin Films", Applied Physics Letter, Vol. 121, Issue 16, Oct. 2022. https://doi.org/10.1063/5.0105962

7. S. Saha, L. Meng, A. F. M. A. U. Bhuiyan, A Sharma, CN Saha, H. Zhao, U. Singisetti; Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices. Appl. Phys. Lett. 25 September 2023; vol 123 issue 13, 2023, https://doi.org/10.1063/5.0155882

Conference:

1. CN Saha,, C. Peterson, Y. Liu, and S. Krishnamoorthy, “Effect of NiOx Sputtering and ICP Dry Etching on (010) β-Ga2O3 Films Grown by MOCVD”, The 8th United States Gallium Oxide workshop (GOX), University of Utah, Salt Lake City, Utah, USA, Aug 4-6, 2025.

2. C. Peterson, CN Saha, R. Kahler, Y. Liu, S. Roy, and S. Krishnamoorthy, “Low-Background Carrier Density Intentionally and Unintentionally Doped (010) β-Ga2O3 Drift Layers and Schottky Diodes," The 8th United States Gallium Oxide workshop (GOX), University of Utah, Salt Lake City, Utah, USA, Aug 4-6, 2025.

3. S. Roy, CN Saha, C. Peterson, J.S. Speck, and S. Krishnamoorthy, “1.8 kV Multi-Fin β-Ga2O3 Vertical FinFET with Field Oxide Exhibiting a PFOM of 1 GW/cm2”, The 8th United States Gallium Oxide workshop (GOX), University of Utah, Salt Lake City, Utah, USA, Aug 4-6, 2025 (Best paper Award).

4. S. Roy, CN Saha, C. Peterson, J.S. Speck, and S. Krishnamoorthy, “Multi-fin β-Ga2O3 Vertical FinFET with Field Oxide Exhibiting a Breakdown Voltage of 1.8 kV and a Record PFOM of 1 GW/cm2”, 83rd Device Research Conference (DRC), Duke University, Durham, North Carolina, USA, June 21-25, 2025 (Oral Presentation, selected in research highlights)

5 N.J. Nipu, CN Saha, U. Singisetti, “Highly Scaled β-(AlxGa1-x)2O3/Ga2O3 Tri-Gate HFETs with Current Gain Cut-Off Frequency of 50 GHz and Power Gain Cut-Off Frequency of 40 GHz ,”7th US Gallium Oxide workshop (GOX),August 5-7, Ohio State University, Columbus, Ohio, 2024. (Oral Presentation)

6. CN Saha, N.J. Nipu, U. Singisetti, β-(Al0.19Ga0.81)2O3/Ga2O3 enhancement HFET with current gain cut off frequency of 40 GHz and power gain cut off frequency 70 GHz , 82nd Device research Conference(DRC), June 23-26, 2024, University of Maryland, College park. (Poster Presentation, selected in top 10)

7. CN Saha, A. Vaidya, AFM Bhuiyan, L. Meng, S. Sharma , H. Zhao and U. Singisetti, ” Highly Scaled β-Ga2O3 MOSFETs with 5.4 MV/cm average breakdown field and near 50 GHz fmax,”6th US Gallium Oxide workshop (GOX),University at Buffalo, New York, August 13-16, 2023. (Best Oral presentation)

8. CN Saha, A. Vaidya and U. Singisetti, ”Temperature dependent pulsed IV and RF performance analysis of β-(Al0.19Ga0.81)2O3/Ga2O3 Heterostructure FET (HFET) with ex-situ passivation,” 50th Material Research Society (MRS) Spring Meeting and Exhibit , April 10-14, San Francisco, CA, 2023 (Poster presentation)

9. CN Saha, A. Vaidya and U. Singisetti, ”Temperature dependent pulsed IV and RF performance of β-(Al0.19Ga0.81)2O3/Ga2O3 Heterostructure FET (HFET) with ex-situ passivation,” Semiconductor research Corporation (SRC) TECHCON, September 18-20, Austin, TX, 2022 (Oral presentation)

10. CN Saha, A. Vaidya and U. Singisetti ,"Si3N4 Ex-situ Passivation Study and Temperature-Dependent RF Performance Analysis of β-(Al0.19Ga0.81)2O3/Ga2O3 HFET" Compound Semiconductor Week(48th ISCS and 33rd IPRM), University of Michigan, Ann arbor, June 2022. (Poster Presentation)

11. CN Saha, A. Vaidya and U. Singisetti, "β-(Al0.19Ga0.81)2O3/Ga2O3 enhancement mode HFETs with high ft-Lg product", 26th Easter Eastman Conference on High Performance Device, University Of Notre Dame Indiana, USA, August 2021. (Oral Presentation)

12. A. Mahmood, W. Echtenkamp, C.P Kwan, M. Randle, CN Saha, P. Dowben, C. Binek, U. Singisetti, J.P Bird, "Magnetic proximity effect in graphene/chromia heterostructures”, JSAP Annual Meetings Extended Abstracts, p 837 ,The 81st JSAP Autumn Meeting 2020, Japan.

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13. CN Saha, R. Fabiha and M. S. Islam, "Effect of dielectric constant and oxide thickness on the performance analysis of symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region," 2017 International Conference on Electrical, Computer and Communication Engineering (ECCE), 2017, pp. 140-144, doi: 10.1109/ECACE.2017.7912895.

14. R. Fabiha, CN Saha and M. S. Islam, "Analytical modeling and performance analysis for symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region," 2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC), 2017, pp. 310-313, doi: 10.1109/R10-HTC.2017.8288963.

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